View SSS3N90A_186179.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 25 A (Max.) @ VDS = 900V n Low RDS(ON) : 4.679 (Typ.)
SSS3N90A
BVDSS = 900 V RDS(on) = 6.2 ID = 2 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) Continuous Drain Current (TC=100) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds

Value 900 2 1.3 12 30 286 2 3.5 1.5 35 0.28 - 55 to +150
Units V A A V mJ A mJ V/ns W W/
300
Thermal Resistance
Symbol RJC RJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 3.57 62.5 Units /W
Rev. A
SSS3N90A
Electrical Characteristics (TC=25 unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(iller? Charge Min. Typ. Max. Units 900 -2.0 -----------------1.13 ------1.78 590 55 22 16 26 47 24 28 5.5 11.9 --3.5 100 -100 25 250 6.2 -770 65 28 40 60 105 60 37 --nC ns pF V V/ V nA
N-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=250A ID=250A VGS=30V VGS=-30V VDS=900V VDS=720V,TC=125 VGS=10V,ID=1A VDS=50V,ID=1A

See Fig 7
VDS=5V,ID=250A
A S
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=3A, RG=16 See Fig 13 VDS=720V,VGS=10V, ID=3A See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Min. Typ. Max. Units --------380 1.9 2 12 1.4 --A V ns C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25,IS=2A,VGS=0V TJ=25,IF=3A diF/dt=100A/s
Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=135mH, IAS=2A, VDD=50V, RG=27, Starting TJ =25 ISD3A, di/dt90A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
11 0
Top : VGS 15V 10 V 8.0 V 7.0 V 6.0 V 5.5V 5.0 V Bottom : 4.5V
SSS3N90A
Fig 2. Transfer Characteristics
1 0
1
ID , Drain Current [A]
10 0
ID , Drain Current [A]
10 0
1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =5 V . DS 0 us et 3 2 0 s P l e T s .5 6 8 1 0
1 -1 0 @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 10 0 11 0
- 5 oC 5 1 -1 0
1 -2 -1 0 1 0
2
4
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
2 5 11 0
Fig 4. Source-Drain Diode Forward Voltage
IDR , Reverse Drain Current [A]
RDS(on) , [ ] Drain-Source On-Resistance
2 0 V =1 V 0 GS 1 5
10 0
1 0 V =2 V 0 GS 5 @ N t : T = 2 oC oe J 5 0 0 3 6 9 1 2
1 -1 0 @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 08 . 10 . 12 .
1 0 oC 5 2 oC 5 1 -2 0 02 . 04 . 06 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
10 00 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd
Fig 6. Gate Charge vs. Gate-Source Voltage
V =10V 8 DS V =40V 5 DS V =70V 2 DS
80 0
1 0
C iss 60 0
VGS , Gate-Source Voltage [V]
Capacitance [pF]
40 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H
5
20 0
C oss C rss
@Nts:I =30A oe . D 0 0 5 1 0 1 5 2 0 2 5 3 0
00 1 0
11 0
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
SSS3N90A
Fig 7. Breakdown Voltage vs. Temperature
12 . 30 .
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
BVDSS , (Normalized) Drain-Source Breakdown Voltage
11 .
RDS(on) , (Normalized) Drain-Source On-Resistance
25 .
20 .
10 .
15 .
10 . @Nts: oe 1 V =1 V . GS 0 2 I =15A .D . -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7
09 .
@Nts: oe 1 V =0V . GS 2 I = 2 0 A .D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7
05 .
08 . -5 7
00 . -5 7
TJ , Junction Temperature [oC]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
12 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y
Fig 10. Max. Drain Current vs. Case Temperature
25 .
ID , Drain Current [A]
11 0 1 0 s 0 1m s 1 0
0
1 s 0
ID , Drain Current [A]
20 .
15 .
1m 0s 10m 0s D C
10 .
1 -1 0
@Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us
05 .
1 -2 0
11 0
12 0
13 0
00 . 2 5
5 0
7 5
10 0
15 2
10 5
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
Fig 11. Thermal Response
Thermal Response
D=0.5 100 0.2 0.1 0.05 10- 1 0.02 0.01 single pulse 10
-2
@ Notes : 1. Z J C (t)=3.57 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)
PDM t1 t2
Z (t) ,
JC
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration
[sec]
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
SSS3N90A
Current Regulator
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
Vout Vin RG DUT 10V
RL Vout VDD
( 0.5 rated VDS )
90%
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
SSS3N90A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
N-CHANNEL POWER MOSFET
DUT
+ VDS --
IS
L
VGS RG VGS
Driver
Same Type as DUT
VDD
* dv/dt controlled by "RG" * IS controlled by Duty Factor "D"
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop

▲Up To Search▲

Price & Availability of SSS3N90A

	To Download SSS3N90A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .